| PART |
Description |
Maker |
| IS64LV51216-12TLA3 IS64LV51216-12TA3 IS61LV51216-1 |
512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 512K X 16 STANDARD SRAM, 8 ns, PDSO44
|
Integrated Silicon Solution, Inc.
天津新技术产业园区管理委员会
|
| AT27BV800 AT27BV800-12JC AT27BV800-12RC AT27BV800- |
8-Megabit 512K x 16 or 1024K x 8 Unregulated Battery-Voltage High Speed OTP EPROM 512K X 16 OTPROM, 150 ns, PDSO44
8-Megabit 512K x 16 or 1024K x 8 Unregulated Battery-Voltage High Speed OTP EPROM 512K X 16 OTPROM, 150 ns, PQCC44
|
ATMEL[ATMEL Corporation]
Atmel, Corp.
|
| AS7C4096A AS7C4096A-20TIN AS7C4096A-10JC AS7C4096A |
SRAM - 5V Fast Asynchronous
5.0V 512K x 8 CMOS SRAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36
High Speed CMOS Logic Quad Buffers with 3-State Outputs 14-PDIP -55 to 125 512K X 8 STANDARD SRAM, 12 ns, PDSO44
High Speed CMOS Logic Quad Buffers with 3-State Outputs 14-SOIC -55 to 125 512K X 8 STANDARD SRAM, 12 ns, PDSO44
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| 50S116T 50S116T-5 50S116T-6 50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
SDRAM(512K X 2 BANKS X 16 BITS SDRAM)
|
CERAMATE TECHNOLOGY CO., LTD.
|
| IS61LV5128AL IS61LV5128AL-10BI IS61LV5128AL-10BLI |
512K x 8 HIGH-SPEED CMOS STATIC RAM
|
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
|
| AT29LV512-25TI AT29LV512-25TC AT29LV512-25JI |
512K 64K x 8 3-volt Only CMOS Flash Memory
High Speed CMOS Logic Quad 2-Input NAND Gates 14-PDIP -55 to 125
High Speed CMOS Logic 4-Bit Binary Ripple Counter 14-SOIC -55 to 125
|
Atmel Corp.
|
| CXK77P18E160GB CXK77P18E160GB-42AE CXK77P18E160GB- |
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18)
|
SONY[Sony Corporation]
|
| AS8NVLC512K32QC-45XT AS8NVLC512K32Q-25XT AS8NVLC51 |
512K x 32 Module nvSRAM 3.3V High Speed SRAM with Non-Volatile Storage
|
Austin Semiconductor
|
| MX26LV040TC-70G MX26LV040 MX26LV040PC-55 MX26LV040 |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
|
MCNIX[Macronix International]
|
| BH616UV8010TC BH616UV8010TI BH616UV8010TIG70 BH616 |
Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| BH616UV8010AI55 BH616UV8010TI70 BH616UV8010DIP55 B |
Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
|
Brilliance Semiconductor
|
